SUBSTRATE HAVING BUFFER LAYER STRUCTURE FOR GROWING NITRIDE SEMICONDUCTOR LAYER
摘要
<p>A substrate having a buffer layer structure for growing a nitride semiconductor layer, comprising an Al layer and an AlN crystal layer stacked sequentially on a (111) main surface of an Si single-crystal substrate, the Al layer having a thickness of two atomic layers to ten atomic layers, and the surface of the AlN crystal layer having a surface that is Al polar with the plane orientation of a (0001) surface.</p>
