发明名称 |
GRAPHENE DEFECT ALTERATION |
摘要 |
<p>Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.</p> |
申请公布号 |
WO2013039506(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
WO2011US51870 |
申请日期 |
2011.09.16 |
申请人 |
EMPIRE TECHNOLOGY DEVELOPMENT LLC;MILLER, SETH ADRIAN |
发明人 |
MILLER, SETH ADRIAN |
分类号 |
C01B31/04;B32B5/00;B82B3/00 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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