发明名称 POWER TRANSISTOR WITH CONTROLLABLE REVERSE DIODE
摘要 An electronic circuit includes a transistor device that can be operated in a reverse operation mode and a control circuit. The transistor device includes a source region, a drain region, a body region and a drift region, a source electrode electrically connected to the source region, a pn junction formed between the body region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region, and a depletion control structure adjacent the drift region. The depletion control structure has a control terminal and is configured to generate a depletion region in the drift region dependent on a drive signal received at the control terminal. The control circuit is coupled to the control terminal of the depletion control structure and configured to drive the depletion control structure to generate the depletion region when the transistor device is operated in the reverse operation mode.
申请公布号 US2013069710(A1) 申请公布日期 2013.03.21
申请号 US201113238576 申请日期 2011.09.21
申请人 HIRLER FRANZ;GOERGENS LUTZ;FELDTKELLER MARTIN;INFINEON TECHNOLOGIES AUSTRIA AG 发明人 HIRLER FRANZ;GOERGENS LUTZ;FELDTKELLER MARTIN
分类号 H03K3/313 主分类号 H03K3/313
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