发明名称 METHOD AND APPARATUS FOR DIRECT BACKUP OF MEMORY CIRCUITS
摘要 An integrated circuit employs at least one active memory circuit and at least one memory state backup circuit wherein the at least one memory state backup circuit includes at least one passive variable resistance memory cell and at least one passive variable resistance memory cell interface that are used to backup data from the active memory circuit to the PVRM cell. Data is then placed back into the active memory circuit from the PVRM cell during a restore operation. The PVRM cell interface is operative to read the PVRM cell in response to a restore signal. PVRM cell interface control logic is operative to remove power to the PVRM cell after backup of the data to the PVRM cell from the active memory circuit. A PVRM cell (e.g., a bit cell) is added to each memory circuit that stores state information on an integrated circuit.
申请公布号 US2013070513(A1) 申请公布日期 2013.03.21
申请号 US201213561547 申请日期 2012.07.30
申请人 WEISS DONALD R.;WUU JOHN J.;ADVANCED MICRO DEVICES, INC. 发明人 WEISS DONALD R.;WUU JOHN J.
分类号 G11C5/14 主分类号 G11C5/14
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