发明名称 APPARATUS FOR GROWING SINGLE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide an apparatus for growing a single crystal, which reduces heat loss while holding an inner shield. <P>SOLUTION: The apparatus for growing a single crystal by a Czochralski method includes a main chamber housing a crucible accommodating a raw material melt, a heater arranged to surround the crucible, and a shield arranged to surround the heater. The shield has a heat shield formed from a carbon fiber heat insulating material and an inner shield formed from a carbon material or a carbon fiber composite material at least on the heater side of the heat shield. The inner shield is directly supported at the lower end part by a supporting member formed from a carbon fiber heat insulating material. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013053017(A) 申请公布日期 2013.03.21
申请号 JP20110190373 申请日期 2011.09.01
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 HOSHI RYOJI;SUGAWARA TAKAYO;SHIMADA AKIO
分类号 C30B15/00 主分类号 C30B15/00
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