| 摘要 |
<p>1,172,230. Schottky barrier device. MATSUSHITA ELECTRONICS CORP. 6 Dec., 1966 [16 Dec., 1965 (3)], No. 54567/66. Heading H1K. [Also in Division C7] A Schottky barrier of tungsten or molybdenum is provided on a body of germanium, silicon or gallium arsenide by forming a gaseous mixture of hydrogen and tungsten or molybdenum halide, heating the gas mixture to 600‹ to 900‹ C. and passing the mixture over the body heated to not more than 500‹ C. An N-type epitaxial Si film 12, 1-5 Á thick and of 1-5 # cm. resistivity is grown on an N-type Si substrate 11 of 0À005 Q cm. by thermal decomposition of SiCl 4 . A perfect metal film 13 is grown on the film 12. An electrode 14 of Al, Au+Sb, Ni or Cu is deposited on the metal film and an ohmic contact 15 made to the substrate. The mesa form is obtained by etching and photo-resist techniques. In another embodiment (Fig. 9, not shown), a thin film diode is made by depositing an epitaxial Si film (22) on an insulating substrate (21) of sapphire, quartz, glass or ceramic and then the metallic film (23) over the Si film. In an alternative embodiment (Fig. 10, not shown) a semi-conductor substrate (31) is covered with an insulating layer (32) through which is formed a hole (33) and the perfect metal film (34, 35) deposited thereover. A metal base transistor may be made using this deposition technique.</p> |
