| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent mutual influence of the voltage variations at gate electrodes of adjacent transistors. <P>SOLUTION: A semiconductor device includes an active region surrounded by an element isolation region 220 in a substrate 100, buried gate electrodes 410a and 410b formed in the active region, and a diffusion layer region 320 provided between the buried gate electrodes 410a and 410b and formed so as to reach the bottoms of the buried gate electrodes 410a and 410b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
