发明名称 SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing device and a manufacturing method of a semiconductor device capable of obtaining excellent film quality with high reproducibility. <P>SOLUTION: A substrate processing device comprises: a substrate placing unit with a heating unit; a rotation axis unit which supports the substrate placing unit and can rotate with the substrate placing unit; a supply line which supplies power to the heating unit; a temperature control unit which is connected to one end of the supply line and has a built-in battery charger; and a power supply unit which supplies power to the temperature control unit. The substrate processing device further includes a control unit which controls power supply. When raising a temperature of the heating unit to a prescribed temperature, the control unit connects the temperature control unit and the power supply unit and supplies power from the power supply unit to the heating unit via the temperature control unit. After the temperature of the heating unit reaches the prescribed temperature, the control unit disconnects the temperature control unit and the power supply unit and supplies power from the battery charger to the heating unit. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013055129(A) 申请公布日期 2013.03.21
申请号 JP20110190773 申请日期 2011.09.01
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKEBAYASHI MOTONARI
分类号 H01L21/31;C23C16/46 主分类号 H01L21/31
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