发明名称 |
METHOD OF FORMING AN ETCH MASK |
摘要 |
A method of forming an etch mask includes: providing a substrate having thereon a material layer to be etched; forming a hard mask layer consisting of a radiation-sensitive, single-layer resist material on the material layer; exposing the hard mask layer to actinic energy to change solvent solubility of exposed regions of the hard mask layer; and subjecting the hard mask layer to water treatment to remove the exposed regions of the hard mask layer, thereby forming a masking pattern consisting of unexposed regions of the hard mask layer. |
申请公布号 |
US2013071790(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113233039 |
申请日期 |
2011.09.15 |
申请人 |
HUANG TSE-YAO;CHEN YI-NAN;LIU HSIEN-WEN |
发明人 |
HUANG TSE-YAO;CHEN YI-NAN;LIU HSIEN-WEN |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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