发明名称 |
RESISTIVE MEMORY CELL INCLUDING INTEGRATED SELECT DEVICE AND STORAGE ELEMENT |
摘要 |
Resistive memory cells including an integrated select device and storage element and methods of forming the same are described herein. As an example, a resistive memory cell can include a select device structure including a Schottky interface, and a storage element integrated with the select device structure such that an electrode corresponding to the Schottky interface serves as a first electrode of the storage element. The storage element can include a storage material formed between the first electrode and a second electrode.
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申请公布号 |
US2013069030(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113234875 |
申请日期 |
2011.09.16 |
申请人 |
WELLS DAVID H.;RAMASWAMY D.V. NIRMAL;PRALL KIRK D.;MICRON TECHNOLOGY, INC. |
发明人 |
WELLS DAVID H.;RAMASWAMY D.V. NIRMAL;PRALL KIRK D. |
分类号 |
H01L45/00;H01L21/8239 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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