| 摘要 |
A nonvolatile semiconductor memory device according to the embodiment comprises a memory cell array including plural blocks arranged in a first direction, each block containing plural memory cells operative to store data; a row decoder including a faulty block information holder circuit operative to store faulty block information indicative that the block is a faulty block; and a faulty block detector circuit operative to, when each of block groups includes at least one of the plural blocks, subject one of the block groups to a first detection step of simultaneously and intensively referring to pieces of faulty block information respectively corresponding to the plural blocks in one of the block groups simultaneously to detect whether the block group contains a faulty block.
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