| 摘要 |
A semiconductor memory device according to an embodiment includes a memory cell array including memory cells each formed from a transistor formed over an active area of a well and disposed at intersections of a word line and a bit line group, the memory cell having different connection states including a state in which a source or a drain of the transistor is not electrically connected to any one of bit lines belonging to the bit line group and states in which the source or the drain is electrically connected only to a specific one of the bit lines, and an active area serving as a gate of the transistor being continuously formed in arrangement areas of the bit lines of the bit line group and spaces between the bit lines.
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