发明名称 |
NON-VOLATILE MEMORY DEVICE |
摘要 |
A non-volatile memory device includes a memory cell including a resistance variable device and a switching unit for controlling a current flowing through the resistance variable device; a read reference voltage generator configured to generate a reference voltage according to a skew occurring in the switching unit; and a sense amplifier configured to sense a voltage corresponding to the current that flows through the resistance variable device based on the reference voltage.
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申请公布号 |
US2013070512(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113340074 |
申请日期 |
2011.12.29 |
申请人 |
YIM HYUCK-SANG;KIM KWANG-SEOK;SONG TAEK-SANG;PARK CHUL-HYUN |
发明人 |
YIM HYUCK-SANG;KIM KWANG-SEOK;SONG TAEK-SANG;PARK CHUL-HYUN |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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