ADAPTIVE READ WORDLINE VOLTAGE BOOSTING APPARATUS AND METHOD FOR MULTI-PORT SRAM

摘要

Embodiments of the invention are directed to systems and methods for adaptively boosting the supply voltage to an SRAM (Static Random Access Memory) (104) in response to process-voltage-temperature variations when needed. Embodiments include a critical path (114) that simulates a typical memory cell (104) and read-out circuit (102) in the SRAM. Applying a trigger signal to a word-line input port (123) of the critical path, and comparing the output (125) of the critical path to a reference-latch signal (127), provides an indication of when to boost the supply voltage to the read-out circuits of the SRAM.