METHOD OF PRODUCING GaN SELF-STANDING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a GaN self-standing substrate in which a GaN layer can be easily peeled from a sapphire ground substrate.

SOLUTION: In the method for producing the GaN self-standing substrate including a step of growing the GaN layer on the sapphire ground substrate from vapor and a step of removing the sapphire ground substrate from the GaN layer by breaking the ground substrate by warpage during the growth or thermal stress during lowering temperature, the sapphire ground substrate is an a-plane sapphire ground substrate 10 whose plane orientation is (11-20), a groove is formed in a front face or a rear face of the sapphire ground substrate so as to cross the whole face of the sapphire ground substrate, and the groove is formed in a plane direction in which the a-plane sapphire ground substrate is easily cleaved.

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