METHOD FOR MANUFACTURING NON-VOLATILE MEMORY ELEMENT, AND NON-VOLATILE MEMORY ELEMENT

摘要

This invention includes: a step (c) for forming a first electroconductive film (105') on a substrate; steps (d, e) for forming a first metal oxide layer (106x"), a second metal oxide layer (106y") having a different level of oxygen deficiency to that of the first metal oxide layer, and a second electroconductive film (107'), on the first electroconductive film (105'); a step (f) for patterning the second electroconductive film (107') and thereby forming a second electrode (107); a step (g) for patterning the first metal oxide layer (106x") and the second metal oxide layer (106y"), and thereby forming a variable resistance layer (106); a step (h) for removing the side section of the variable resistance layer (106) to a position further inward relative to the outline of the second electrode (107) on a plane parallel to the principal surface of the substrate; and a step (i) for patterning the first electroconductive film (105') and thereby forming a first electrode (105) after, or in the same step as, the step for removing the side section of the variable resistance layer (106).