SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

摘要

Provided is a sputtering target having high electrical conductivity and capable of forming a WOx film by DC sputtering. Also provided is a method for producing the sputtering target. This sputtering target is a sintered body of tungsten oxide having a structure comprising at least two phases including a WO2 phase and a W18O49 phase, wherein the percentage of the WO2 phase in the structure is 5% or higher. The method for producing said sputtering target involves a step of preparing a tungsten oxide powder containing WO2 and at least one of W18O49 and WO3, and a step of sintering the tungsten oxide powder in a vacuum by hot pressing to produce a sintered body of tungsten oxide, wherein the content of said WO2 in said tungsten oxide powder is 5-95 mol%.