| 摘要 |
<p>A deposit and a method for producing a deposit on a surface of a silicon substrate. The deposit comprises aluminum oxide, and the method comprises in any order the alternating steps of a) introducing into a reaction space one of water and ozone as a precursor for oxygen, b) introducing into a reaction space the other of water and ozone as a precursor for oxygen, c) introducing into a reaction space a precursor for aluminum and subsequently purging the reaction space;with the provisions that when step a) or step b) precedes step c) then the reaction space is purged before step c), and that the reaction space is not purged between step a) and step b), when step a) precedes step b) or when step b) precedes step a).</p> |
