发明名称 |
FLEXIBLE SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SAME, AND IMAGE DISPLAY DEVICE |
摘要 |
<p>There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (A) providing a metal foil; (B) forming an insulating layer on the metal foil, the insulating layer having a portion serving as a gate insulating film; (C) forming a supporting substrate on the insulating layer; (D) etching away a part of the metal foil to form a source electrode and a drain electrode therefrom; (E) forming a semiconductor layer in a clearance portion located between the source electrode and the drain electrode by making use of the source and drain electrodes as a bank member; and (F) forming a resin film layer over the insulating layer such that the resin film layer covers the semiconductor layer, the source electrode and the drain electrode. In the step (F), a part of the resin film layer interfits with the clearance portion located between the source and drain electrodes.</p> |
申请公布号 |
EP2571043(A1) |
申请公布日期 |
2013.03.20 |
申请号 |
EP20110780349 |
申请日期 |
2011.04.22 |
申请人 |
PANASONIC CORPORATION |
发明人 |
SUZUKI, TAKESHI;HIRANO, KOICHI |
分类号 |
H01L21/336;G02F1/1368;G09F9/00;G09F9/30;H01L29/41;H01L29/417;H01L29/786;H01L51/50 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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