| 摘要 |
FIELD: process engineering.SUBSTANCE: invention relates to metallurgy. Ingot features wall expanding upward to taper ? and annular discard all around the ingot top perimetre. At H/ T? 1 wall taper at distance 2Tfrom ingot end makes 5-6%, while annular discard thickness Tmakes 1.1 T?( 1+1/a) or, for heat-insulation discards, 0.9T?(1+1/a), where T?is ingot wall mean thickness, mm, a is preset value of discard height-to-thickness ratio- Hto T= 1.0-2.0.EFFECT: ruled out shrinkage defects.1 dwg |
