FURNACE FOR FABRICATING GALLIUM NITRIDE SUBSTRATE

摘要

PURPOSE: A chamber for manufacturing a GaN substrate is provided to improve the growth quality of a substrate by preventing cracks of the substrate. CONSTITUTION: A chamber(110) accommodates a substrate(5). The chamber has a gas inlet and a gas outlet. A heater is installed in the chamber. GaN is deposited on the substrate. The heater heats gas in the chamber.