发明名称 DISCONTINUOUS THIN SEMICONDUCTOR WAFER SURFACE FEATURES
摘要 A semiconductor wafer has a semiconductor substrate and films on the substrate. The substrate and/or the films have at least one etch line creating a discontinuous surface that reduces residual stress in the wafer. Reducing residual stress in the semiconductor wafer reduces warpage of the wafer when the wafer is thin. Additionally, isolation plugs may be used to fill a portion of the etch lines to prevent shorting of the layers.
申请公布号 EP2427905(B1) 申请公布日期 2013.03.20
申请号 EP20100718017 申请日期 2010.05.07
申请人 QUALCOMM INCORPORATED 发明人 CHANDRASEKARAN, ARVIND
分类号 H01L21/302;H01L23/58;H01L25/065 主分类号 H01L21/302
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