发明名称 METHOD FOR FORMING OXIDE FILM
摘要 PURPOSE: A method for forming an oxidation thin film is provided to efficiently form an oxidation thin film without transforming an object and to prevent impurities remained on the object. CONSTITUTION: A method for forming an oxidation thin film comprises step for forming oxidation thin films(3,4) by dipping a part of an object(1) with thickness of 1mm or greater into electrolyte(2); and a step for forming the oxidation thin film on the other part by dipping the other part of the object into the electrolyte without forming a mask material in a boundary portion between parts where the oxidation films are formed or parts where the oxidation films are not formed.
申请公布号 KR20130028856(A) 申请公布日期 2013.03.20
申请号 KR20120091827 申请日期 2012.08.22
申请人 ULVAC TECHNO, LTD. 发明人 ISHIGURE FUMIAKI;INAYOSHI SAKAE;ISHIKAWA YUICHI;SATO HIROSHI
分类号 C25D11/04;C25D11/12 主分类号 C25D11/04
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