VERFAHREN ZUM EPITAKTISCHEN ABSCHNEIDEN EINER HALBLEITERSCHICHT

摘要

In the epitaxial deposition from a reaction gas of e.g. a semi-conductor material such as Si or Ge on to a heated semi-conductor substrate e.g. Si or Ge, the substrate is mounted in a horizontal plane in a reaction chamber and the reaction gas which enters the reaction chamber at a point above the substrate and spaced therefrom a distance not exceeding 1.5 times the internal diameter of the chamber, has a Reynolds number not exceeding 50. The reaction chamber 2 comprises an upper removable part 4 containing the reaction gas inlet 5 and a gas outlet 6, and a lower removable part 3 containing the substrates 1, the dimension of the inlet pipe and the chamber being such that at the gas flow-rate used the Reynolds number of the gas in the pipe and chamber does not exceed 50. The heater 7 for heating the substrates may be inside, outside or partially inside the chamber and a graphite plate 8 may be placed between the heater and the substrates. The heated substrates are pre-treated with a gas mixture of HC1 and H2 or a gas which liberates HC1. The reaction gas then enters the chamber and deposition takes place at a maximum rate of 3 microns per minute. After coating the chamber is purged with an inert gas such as H2. The reaction gas may be a compound of the semi-conductor material with a halogen and/or hydrogen.ALSO: In the epitaxial deposition from a reaction gas of, e.g. a semi-conductor material such as Si on to a heated semi-conductor substrate, e.g. Si, the substrate is mounted in a horizontal plane in a reaction chamber and the reaction gas which enters the reaction chamber at a point above the substrate and spaced therefrom at a distance not exceeding 1.5 times the internal diameter of the chamber, has a Reynolds number not exceeding 50. The reaction chamber 2 comprises an upper removable part 4 containing the reaction gas inlet 5 and a gas outlet 6, and a lower removable part 3 containing the substrates 1, the dimensions of the inlet pipe and the chamber being such that at the gas flow rate used the Reynolds number of the gas in the pipe and chamber does not exceed 50. The heater 7 for heating the substrates may be inside, outside or partially inside the chamber and a graphite plate 8 may be placed between the heater and the substrates. The heated substrates are pretreated with a gas mixture of HCl and H2 or a gas which liberates HCl. The reaction gas then enters the chamber and deposition takes place at a maximum rate of 3 microns per minute. After coating the chamber is purged with an inert gas such as H2. The reaction gas may be a compound of the semi-conductor material with a halogen and/or hydrogen.