Semiconductor device comprising surrounding gate transistors.

摘要

The semiconductor device is provided with SRAM using an inverter circuit having: a first gate insulating film 192 surrounding the periphery of the first island-shaped silicon layer 109, a first gate electrode 183 surrounding the periphery of the first gate insulating film 192, a second gate insulating film 192 surrounding the periphery of the first gate electrode, a first columnar silicon layer 133 surrounding the periphery of the second gate insulating film, a first upper part high concentration semiconductor layer of the first conductivity type 149 formed in the upper part of the first island-shaped silicon layer, a second lower part high concentration semiconductor layer of the first conductivity type 153 formed in the lower part of the first island-shaped silicon layer, a first upper part high concentration semiconductor layer of the second conductivity type 161 formed in the upper part of the first columnar silicon layer, and a second lower part high concentration semiconductor layer of the second conductivity type 163 formed in the lower part of the first columnar silicon layer.