FERROELECTRIC CAPACITOR FOR FLEXIBLE NONVOLATILE MEMORY DEVICE, FLEXIBLE NONVOLATILE FERROELECTRIC MEMORY DEVICE, AND MANUFACTURING METHOD FOR THE SAME

摘要

PURPOSE: A ferroelectric capacitor for a flexible nonvolatile memory device, a flexible nonvolatile ferroelectric memory device, and a method for manufacturing the same are provided to improve the performance of a flexible memory by using a ferroelectric layer. CONSTITUTION: A semiconducting channel layer(510) is formed on a flexible substrate. A source and a drain region(520,530) are formed at both sides of the semiconductor channel layer. A barrier layer(540) is formed on the semiconductor channel layer. A ferroelectric layer(550) is formed on the barrier layer. A source and a drain electrode(570,580) are formed on the source and the drain region.