DELTA MONOLAYER DOPANTS EPITAXY FOR EMBEDDED SOURCE/DRAIN SILICIDE,申请号KR20127032728-传众专利搜索

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发明名称	DELTA MONOLAYER DOPANTS EPITAXY FOR EMBEDDED SOURCE/DRAIN SILICIDE
摘要
申请公布号	KR20130028941(A)	申请公布日期	2013.03.20
申请号	KR20127032728	申请日期	2011.06.10
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	CHAN KEVIN K.;DUBE ABHISHEK;HOLT JUDSON R.;JOHNSON JEFFREY B.;LI JINGHONG;PARK, DAE GYU;ZHU ZHENGMAO
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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