发明名称 METHOD FOR GROWING GALLIUM NITRIDE MONOCRYSTALS
摘要 FIELD: electrical engineering.SUBSTANCE: according to the method, charge stock containing a gallium source and flux components is heated and maintained at the specified temperature or, alternatively, heated and slowly cooled down from the specified temperature inside a container, with a temperature gradient maintained between the upper and the lower parts of the container under a nitrogen-containing gas pressure. The flux, by way of core components, contains cyanides or cyanamides or dicyanamides of alkaline and/or alkaline-earth metals and modifying additives enhancing gallium nitride solubility and/or increasing growth rate and/or enabling control of physical properties of crystals obtained.EFFECT: reduced rate of corrosion of the latter, improved quality of monocrystals obtained.16 cl, 2 tbl
申请公布号 RU2477766(C1) 申请公布日期 2013.03.20
申请号 RU20110140545 申请日期 2011.09.22
申请人 OBSHCHESTVO S OGRANICHENNOJ OTVETSTVENNOST'JU "INNOVATSIONNOE NAUCHNO-PROIZVODSTVENNOE PREDPRIJATIE"KRISTALL" 发明人
分类号 C30B9/12;C30B19/02;C30B29/38 主分类号 C30B9/12
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