| 摘要 |
1,126,639. Treating silicon. ITT INDUSTRIES Inc. 24 Feb., 1967 [1 March, 1966], No. 8972/67. Heading C1A. [Also in Division H1] A semi-conductor wafer is subject to identical mechanical treatments on both faces prior to epitaxial deposition of a semi-conductor layer from the gas phase on one face. In a typical case the treatment consists in lapping both faces of a 400-500Á thick silicon wafer to reduce it to a thickness of 300Á, polishing then with diamond paste and then etching. |
