发明名称 Organic Thin Film Transistor Substrate And Fabricating Method Thereof
摘要 An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.
申请公布号 KR101244898(B1) 申请公布日期 2013.03.19
申请号 KR20060058697 申请日期 2006.06.28
申请人 发明人
分类号 G02F1/136;G02F1/361 主分类号 G02F1/136
代理机构 代理人
主权项
地址