发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device including a memory cell array of memory cells arranged in a matrix, each of which includes a selecting transistor and a memory cell transistor; a column decoder controlling the potential of bit lines; a voltage application circuit controlling the potential of the first word lines; a first row decoder controlling the potential of the second word lines; and a second row decoder controlling the potential of the source line. The column decoder is formed of a circuit whose withstand voltage is lower than the voltage application circuit and the second row decoder. |
申请公布号 |
US8400828(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US201213435901 |
申请日期 |
2012.03.30 |
申请人 |
TORII SATOSHI;MIZUTANI KAZUHIRO;NOMURA TOSHIO;ASANO MASAYOSHI;FUKUOKA IKUTO;MAWATARI HIROSHI;TAKAHASHI MOTOI;FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
TORII SATOSHI;MIZUTANI KAZUHIRO;NOMURA TOSHIO;ASANO MASAYOSHI;FUKUOKA IKUTO;MAWATARI HIROSHI;TAKAHASHI MOTOI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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