发明名称 |
Magnetic field assisted stram cells |
摘要 |
Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations. |
申请公布号 |
US8400825(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US201213491891 |
申请日期 |
2012.06.08 |
申请人 |
WANG XIAOBIN;XI HAIWEN;LIU HONGYUE;JIN INSIK;ROELOFS ANDREAS;YAN EILEEN;DIMITROV DIMITAR V.;SEAGATE TECHNOLOGIES LLC |
发明人 |
WANG XIAOBIN;XI HAIWEN;LIU HONGYUE;JIN INSIK;ROELOFS ANDREAS;YAN EILEEN;DIMITROV DIMITAR V. |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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