| 摘要 |
A method of manufacturing a semiconductor device includes: carrying a substrate having an oxide film and a nitride film stacked thereon into a processing chamber; supporting and heating the substrate using a substrate support member provided in the processing chamber; adjusting flow rates of hydrogen-containing gas and nitrogen-containing gas in process gas using a gas flow rate controller to set a percentage R of the number of hydrogen atoms with respect to the total number of hydrogen atoms and nitrogen atoms contained in the process gas to be 0%<R≰80%; supplying the process gas with the adjusted flow rates into the processing chamber using a gas supplying unit; exciting the process gas supplied into the processing chamber using a plasma generator; processing the substrate with the excited process gas; and carrying the substrate out of the processing chamber. |
