发明名称 |
Layer structure with EMI shielding effect |
摘要 |
A layer structure with an electromagnetic interference (EMI) shielding effect is applicable for reducing an EMI effect caused by signal transmission between through silicon vias, so as to effectively provide the EMI shielding effect between electrical interconnections of a three-dimensional (3D) integrated circuit. By forming EMI-shielding through silicon vias at predetermined positions between the through silicon vias used for signal transmission, a good EMI shielding effect can be attended, and signal distortion possibly caused by the EMI effect can be reduced between different chips or substrates.
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申请公布号 |
US8399965(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US201113242941 |
申请日期 |
2011.09.23 |
申请人 |
TSAI MING-FAN;LEE HSIN-HUNG;FANG BO-SHIANG;SILICONWARE PRECISION INDUSTRIES CO., LTD. |
发明人 |
TSAI MING-FAN;LEE HSIN-HUNG;FANG BO-SHIANG |
分类号 |
H01L23/552 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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