发明名称 Semiconductor storage device and boosting circuit
摘要 A boosting circuit includes a clock control circuit which outputs a first reference clock signal by controlling the clock signal, and which outputs a second reference clock signal having a same period as that of the first reference clock signal, the second reference clock signal shifted in phase from the first reference clock signal. The boosting circuit includes a first pump clock generation circuit which outputs the first reference clock signal which is input thereto, as a first pump clock signal in accordance with a first pump flag signal. The boosting circuit includes a second pump clock generation circuit which outputs the second reference clock signal which is input thereto, as a second pump clock signal in accordance with a second pump flag signal. The boosting circuit includes a first charge pump which boosts an input voltage in accordance with the first pump clock signal. The boosting circuit includes a second charge pump which boosts an input voltage in accordance with the second pump clock signal.
申请公布号 US8400838(B2) 申请公布日期 2013.03.19
申请号 US201113053476 申请日期 2011.03.22
申请人 KUMAZAKI NORIYASU;UEMURA MASAFUMI;KABUSHIKI KAISHA TOSHIBA 发明人 KUMAZAKI NORIYASU;UEMURA MASAFUMI
分类号 G11C16/06 主分类号 G11C16/06
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