发明名称 Multi-port non-volatile memory that includes a resistive memory element
摘要 A system and method to access a multi-port non-volatile memory that includes a resistive memory element is disclosed. In a particular embodiment, a multi-port non-volatile memory device is disclosed that includes a resistive memory cell and multiple ports coupled to the resistive memory cell.
申请公布号 US8400822(B2) 申请公布日期 2013.03.19
申请号 US20100728337 申请日期 2010.03.22
申请人 RAO HARI M.;KIM JUNG PILL;QUALCOMM INCORPORATED 发明人 RAO HARI M.;KIM JUNG PILL
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利