发明名称 |
Resistance change memory device |
摘要 |
A resistance change memory device includes: a memory cell array with memory cells arranged therein, the memory cell having a variable resistance element for storing a rewritable resistance value; a reference cell formed of the same memory cells as those set in a high resistance state in the memory cell array, the reference cell being trimmed with selection of the number of parallel-connected memory cells to have a reference current value used for detecting data in the memory cell array; and a sense amplifier configured to compare a cell current value of a memory cell selected in the memory cell array with the reference current value of the reference cell. |
申请公布号 |
US8400816(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US201113237500 |
申请日期 |
2011.09.20 |
申请人 |
TODA HARUKI;INOUE HIROFUMI;NAKAI HIROTO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TODA HARUKI;INOUE HIROFUMI;NAKAI HIROTO |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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