发明名称 Process for improved chemcial vapor deposition of polysilicon
摘要 A process for producing silicon rods including providing a reactor vessel containing at least one reaction chamber surrounded by a jacket, wherein a pre-heating fluid is circulated in the jacket; one or more electrode assemblies extending into the reaction chamber wherein each electrode assembly comprises a gas inlet, one or more heat transfer fluid inlets/outlets, at least one pair of silicon filaments, the filaments connected to each other at their upper ends with a silicon bridge to form a filament/slim rod assembly, each filament/slim rod assembly enclosed in an isolation jacket; a source of a silicon-bearing gas connected to the interior of the vessel for supplying the gas into the reaction chamber to produce a reaction and to deposit polycrystalline silicon on the filament by chemical vapor deposition thereby producing a rod of polycrystalline silicon; a heat transfer system that is connected to the jacketed reaction chamber that supplies heat transfer fluid to preheat the reaction chamber; and a power supply wherein the power supply supplies less than about 26,000 volts; wherein the apparatus does not include a heating finger is provided.
申请公布号 US8399072(B2) 申请公布日期 2013.03.19
申请号 US20090478089 申请日期 2009.06.04
申请人 REVANKAR VITHAL;LAHOTI SANJEEV;SAVI RESEARCH, INC. 发明人 REVANKAR VITHAL;LAHOTI SANJEEV
分类号 C23C8/00;C23C16/00 主分类号 C23C8/00
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