发明名称 |
Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor |
摘要 |
Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other on an SOI substrate having a (100) surface such a way that the ridge lines of the triangular columnar members face via an insulator; processing the silicon crystal configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; and as a nanowire, processing the silicon crystal by orientation dependent wet etching into a shape where two triangular columnar members are arranged one above the other in such a way that the ridge lines of the triangular columnar members configuring the nano-wires face through the ridge lines thereof, and an integrated circuit including the nano-wire field effect transistor. |
申请公布号 |
US8399879(B2) |
申请公布日期 |
2013.03.19 |
申请号 |
US20090993880 |
申请日期 |
2009.06.05 |
申请人 |
LIU YONGXUN;MATSUKAWA TAKASHI;ENDO KAZUHIKO;OUCHI SHINICHI;SAKAMOTO KUNIHIRO;MASAHARA MEISHOKU;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
LIU YONGXUN;MATSUKAWA TAKASHI;ENDO KAZUHIKO;OUCHI SHINICHI;SAKAMOTO KUNIHIRO;MASAHARA MEISHOKU |
分类号 |
H01L29/06;H01L31/0328;H01L31/0336;H01L31/072 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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