| 摘要 |
A chemical vapor deposition apparatus is disclosed, which is capable of improving the yield by an extension of a cleaning cycle, the chemical vapor deposition apparatus comprising a chamber with a substrate-supporting member for supporting a substrate; a chamber lid with plural first source supplying holes, the chamber lid installed over the chamber; plural source supplying pipes for supplying a process source to the plural first source supplying holes; a spraying-pipe supporting member with plural second source supplying holes corresponding to the plural first source supplying holes, the spraying-pipe supporting member detachably installed in the chamber lid; and plural source spraying pipes with plural third source supplying holes and plural source spraying holes, the plural source spraying pipes supported by the spraying-pipe supporting member, wherein the plural third source supplying holes are supplied with the process source through the plural second source supplying holes, and the plural source spraying holes are provided to spray the process source onto the substrate. |
