发明名称 Semiconductor device
摘要 A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the standard cell in Y direction, and includes a plurality of opposite end portions formed of gate patterns that are opposed to the end portions, in addition to a diffusion layer which functions as a diode.
申请公布号 US8399928(B2) 申请公布日期 2013.03.19
申请号 US201113179214 申请日期 2011.07.08
申请人 IKEGAMI TOMOAKI;NAKANISHI KAZUYUKI;TAMARU MASAKI;PANASONIC CORPORATION 发明人 IKEGAMI TOMOAKI;NAKANISHI KAZUYUKI;TAMARU MASAKI
分类号 H01L21/00 主分类号 H01L21/00
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