Semiconductor devices including buried gate electrodes including bitline shoulder attack protection and methods of forming such semiconductor devices

摘要

A semiconductor device, including a semiconductor substrate including isolations defining active regions of the semiconductor substrate, a plurality of buried gate electrodes extending below an upper surface of the active regions of the semiconductor device, a plurality of bit lines extending on the semiconductor substrate along a first direction, a plurality of insulating patterns extending on the semiconductor substrate along a second direction that crosses the first direction, and a plurality of capping patterns extending over the bit lines, wherein the insulating patterns and the capping pattern both include insulating material and at least a portion of corresponding ones of the insulating patterns and the capping patterns are in direct contact with each other.