发明名称 |
CONTROL METHOD OF NONVOLITILE MEMORY DEVICE |
摘要 |
PURPOSE: A method for controlling a nonvolatile memory device is provided to improve the lifetime and performance of a memory device by referring to a wearing degree of a memory cell. CONSTITUTION: Memory cells to detect a wearing index are programmed(S810). Threshold voltages of the programmed memory cells are read(S820). A high read voltage corresponds to a high wearing index. The wearing index of the memory cells is detected(S830). A nonvolatile memory device is managed by referring to the wearing index(S840). |
申请公布号 |
KR20130027153(A) |
申请公布日期 |
2013.03.15 |
申请号 |
KR20110090542 |
申请日期 |
2011.09.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG, JAE YONG |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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