发明名称 CONTROL METHOD OF NONVOLITILE MEMORY DEVICE
摘要 PURPOSE: A method for controlling a nonvolatile memory device is provided to improve the lifetime and performance of a memory device by referring to a wearing degree of a memory cell. CONSTITUTION: Memory cells to detect a wearing index are programmed(S810). Threshold voltages of the programmed memory cells are read(S820). A high read voltage corresponds to a high wearing index. The wearing index of the memory cells is detected(S830). A nonvolatile memory device is managed by referring to the wearing index(S840).
申请公布号 KR20130027153(A) 申请公布日期 2013.03.15
申请号 KR20110090542 申请日期 2011.09.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, JAE YONG
分类号 G11C16/10 主分类号 G11C16/10
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