发明名称 |
A HORIZONTAL INTERDIGITATED CAPACITOR STRCUTURE WITH VIAS |
摘要 |
PURPOSE: A horizontal engaged capacitor structure using a via is provided to protect a capacitor from different conductive features and a substrate around the capacitor by including a shield structure for providing a shield function to the capacitor. CONSTITUTION: A substrate includes a surface defined by a first axis and a second axis. The second axis is vertical to the first axis. A capacitor structure(40) is arranged on the substrate. The capacitor structure includes an anode configuration with a plurality of first conductive features(42a) and a cathode configuration with a plurality of second conductive features(44a). The first conductive feature and the second conductive feature include two metal lines extended along the first axis and at least one metal via, respectively. The metal via is extended along a third axis connecting two metal lines. The first conductive feature is engaged with the second conductive feature along the second axis and the third axis. [Reference numerals] (AA) Anode; (BB) Cathode |
申请公布号 |
KR20130027404(A) |
申请公布日期 |
2013.03.15 |
申请号 |
KR20120020249 |
申请日期 |
2012.02.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHO HSIU YING |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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