发明名称 |
REACTION SYSTEM FOR GROWING A THIN FILM |
摘要 |
An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet. |
申请公布号 |
KR20130027575(A) |
申请公布日期 |
2013.03.15 |
申请号 |
KR20137004189 |
申请日期 |
2006.01.17 |
申请人 |
ASM AMERICA, INC. |
发明人 |
VERGHESE MOHITH;SHERO ERIC;BABIC DARKO;TERHORST HERBERT;PEUSSA MARKO;YAN MIN |
分类号 |
C23C16/455;C30B25/14 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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