| 摘要 |
<p>PURPOSE: A 3D semiconductor device and a manufacturing method thereof are provided to reduce the resistance of conductive patterns by forming the conductive patterns with the same metal materials to form an electrode structure. CONSTITUTION: A common source line is arranged on a substrate(100). Cell strings are two-dimensionally arranged on the common source line or the substrate and include a plurality of ground selection lines, a plurality of word lines, and a plurality of string selection lines. The plurality of ground selection lines are arranged between the common source line and a bit line. A semiconductor pillar is vertically extended from the common source line and is connected to the bit line. A data storage layer(170) is formed between the word line and the semiconductor pillar.</p> |
