| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming method capable of controlling crystallinity of a silicon film when forming the silicon film that becomes, for instance, a power generation layer of a solar cell by using a plasma CVD method. <P>SOLUTION: The film forming method comprises a combination of the steps of: a first step (pre-mix) of preliminarily mixing a hydrogen gas and a monosilane gas and changing the mixed gas into plasma to form a silicon film F1 on a substrate S; and a second step (post-mix) of separately supplying a hydrogen gas and a monosilane gas and changing the gases into plasma to form a silicon film F2. The combination method includes: a method of forming the silicon film F1 on the substrate S by the pre-mix and then forming the silicon film F2 on the silicon film F1 by the post-mix, and a method of alternately forming the silicon film F1 and silicon film F2 on the substrate S in a plurality of times. <P>COPYRIGHT: (C)2013,JPO&INPIT |
