| 摘要 |
PURPOSE: A microwave applying unit and a substrate processing device including the same are provided to uniformly process the substrate by controlling a plasma density distribution. CONSTITUTION: A process chamber(100) includes an inner space(101). A substrate support unit includes an electrostatic chuck to absorb a substrate using an electrostatic force. The electrostatic chuck includes a dielectric substrate(210), a bottom electrode(220), a heater(230), a support plate(240), and a focus ring(280). A microwave applying unit excites process gas in the process chamber by applying microwaves to the process chamber. The microwave applying unit includes a microwave supply unit and an antenna(440) to apply the microwaves to the process chamber. The microwave supply unit includes a microwave source(411), a fixed waveguide, and a matching circuit(413).
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