发明名称 Method for Fabricating Field Effect Transistor Devices with High-Aspect Ratio Mask
摘要 A method for forming feature on a substrate includes forming at least one layer of a feature material on a substrate, patterning a photolithographic resist material on the at least one layer of the feature material, removing portions of the feature material to define a feature, depositing a masking material layer over the resist material and exposed regions of the substrate, modifying a portion of the substrate, and removing the masking material layer and the resist material.
申请公布号 US2013065370(A1) 申请公布日期 2013.03.14
申请号 US201113229154 申请日期 2011.09.09
申请人 ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H.
分类号 H01L21/336 主分类号 H01L21/336
代理机构 代理人
主权项
地址