发明名称 |
METHOD FOR PREPARING SPACER TO REDUCE COUPLING INTERFERENCE IN MOSFET |
摘要 |
The present invention provides a method for preparing spacer to reduce coupling interference in MOSFET, which includes the steps of: forming a gate oxide layer on the semiconductor substrate; forming a gate on the gate oxide layer; and depositing a low-K dielectric material on the gate and the semiconductor substrate, and doping with carbon during deposition to form a carbon-containing low-K dielectric layer and then forming the spacer by an etching process.
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申请公布号 |
US2013065385(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201113339422 |
申请日期 |
2011.12.29 |
申请人 |
HUANG XIAOLU;ZHANG CHAOS;CHEN YUWEN;SHANGHAI HUALI MICROELECTRONICS CORPORATION |
发明人 |
HUANG XIAOLU;ZHANG CHAOS;CHEN YUWEN |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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